Preparation of Cu{sub x}In{sub y}Ga{sub z}Se{sub n} precursor films and powders by electroless deposition
A method for electroless deposition of Cu{sub x}In{sub y}Ga{sub z}Se{sub n} (x = 0--2, y = 0--2, z = 0--2, n = 0--3) precursor films and powders onto a metallic substrate comprising: preparing an aqueous bath solution of compounds selected from the group consisting of: (I) a copper compound, a selenium compound, an indium compound and gallium compound; (II) a copper compound, a selenium compound and an indium compound; (III) a selenium compound, and indium compound and a gallium compound; (IV) a selenium compound and a indium compound; and (V) a copper compound and selenium compound; each compound being present in sufficient quantity to react with each other to produce Cu{sub x}In{sub y}Ga{sub z}Se{sub n} (x = 0--2, y = 0--2, z = 0--2, n = 0--3); adjusting the pH of the aqueous bath solution to an acidic value by the addition of a dilute acid; and initiating an electroless reaction with an oxidizing counterelectrode for a sufficient time to cause a deposit of Cu{sub x}In{sub y}Ga{sub z}Se{sub n} (x = 0--2, y = 0--2, z = 0--2, n = 0--3) from the aqueous bath solution onto a metallic substrate.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 20013847
- Resource Relation:
- Other Information: PBD: 2 Nov 1999
- Country of Publication:
- United States
- Language:
- English
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