Production of films and powders for semiconductor device applications
- Littleton, CO
- Golden, CO
A process for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cu.sub.x Se.sub.n, wherein x=1-2 and n=1-3; (2) Cu.sub.x Ga.sub.y Se.sub.n, wherein x=1-2, y=0-1 and n=1-3; (3) Cu.sub.x In.sub.y Se.sub.n, wherein x=1-2.27, y=0.72-2 and n=1-3; (4) Cu.sub.x (InGa).sub.y Se.sub.n, wherein x=1-2.17, y=0.96-2 and n=1-3; (5) In.sub.y Se.sub.n, wherein y=1-2.3 and n=1-3; (6) Cu.sub.x S.sub.n, wherein x=1-2 and n=1-3; and (7) Cu.sub.x (InGa).sub.y (SeS).sub.n, wherein x=1-2, y=0.07-2 and n=0.663-3. A reaction vessel containing therein a substrate upon which will form one or more layers of semiconductor material is provided, and relevant solution mixtures are introduced in a sufficient quantity for a sufficient time and under favorable conditions into the vessel to react with each other to produce the resultant salt being prepared and deposited as one or more layers on the substrate and as a powder on the floor of the vessel. Hydrazine is present during all reaction processes producing non-gallium containing products and optionally present during reaction processes producing gallium-containing products to function as a strong reducing agent and thereby enhance reaction processes.
- Research Organization:
- Midwest Research Institute, Kansas City, MO (United States)
- DOE Contract Number:
- AC36-83CH10093
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Number(s):
- US 5731031
- OSTI ID:
- 871432
- Country of Publication:
- United States
- Language:
- English
Solution Growth and Electrodeposited CuInSe2Thin Films
|
journal | October 1983 |
Preparation and characterization of chemically deposited CuInS2 thin films
|
journal | May 1986 |
Chemical bath deposition of CuxS thin films using ethylenediaminetetraacetic acid (EDTA) as complexing agent
|
journal | December 1989 |
The properties of chemically deposited Cu2−xSe thin films
|
journal | June 1987 |
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Related Subjects
films
powders
semiconductor
device
applications
process
chemical
bath
deposition
selenide
sulfide
salts
employable
precursors
fabrication
solar
cell
devices
cu
1-2
1-3
0-1
27
72-2
inga
17
96-2
07-2
663-3
reaction
vessel
containing
therein
substrate
form
layers
material
provided
relevant
solution
mixtures
introduced
sufficient
quantity
time
favorable
conditions
react
produce
resultant
salt
prepared
deposited
powder
floor
hydrazine
processes
producing
non-gallium
products
optionally
gallium-containing
function
strong
reducing
agent
enhance
cell device
reaction processes
device applications
solar cell
semiconductor material
semiconductor device
reaction vessel
reducing agent
sufficient time
vessel containing
reaction process
sufficient quantity
cell devices
solution mixture
containing therein
/427/136/423/438/