Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells

Patent · Sat Dec 31 23:00:00 EST 1994

OSTI ID:870025

Noufi, Rommel ^[1]; Gabor, Andrew M ^[2]; Tuttle, John R ^[3]; Tennant, Andrew L ^[3]; Contreras, Miguel A ^[1]; Albin, David S ^[3]; Carapella, Jeffrey J ^[4]

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1. Golden, CO
2. Boulder, CO
3. Denver, CO
4. Evergreen, CO

A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.

• Research Organization: Midwest Research Institute (Kansas City, MO)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-83CH10093
• Assignee: Midwest Research Institute (Kansas City, MO)
• Patent Number(s): US 5441897
• Application Number: 08/197,204
• OSTI ID: 870025
• Country of Publication: United States
• Language: English

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/438/136/427/
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