Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells

Patent · Tue Aug 15 04:00:00 EDT 1995

OSTI ID:100995

Noufi, R.; Gabor, A. M.; Tuttle, J. R.; Tennant, A. L.; Contreras, M. A.; Albin, D. S.; Carapella, J. J.

A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-83CH10093
• Assignee: Midwest Research Inst., Kansas City, MO (United States)
• Patent Number(s): US 5,441,897/A/
• Application Number: PAN: 8-197,204
• OSTI ID: 100995
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CHEMICAL COMPOSITION
COPPER SELENIDES
COPPER SULFIDES
FABRICATION
GALLIUM SELENIDES
GALLIUM SULFIDES
INDIUM SELENIDES
INDIUM SULFIDES
SEMICONDUCTOR MATERIALS
SOLAR CELLS