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Preparation of Cu(In,Ga){sub 2}Se{sub 3.5} thin films by radio frequency sputtering from stoichiometric Cu(In,Ga)Se{sub 2} and Na{sub 2}Se mixture target

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.365338· OSTI ID:504579
; ;  [1];  [2]
  1. Department of Electric and Electronic Engineering, Toyohashi University of Technology, Toyohashi 441 (Japan)
  2. Department of Electrical Engineering, Wakayama College of Technology, Gobo 644 (Japan)
Defect chalcopyrite thin films of Cu(In,Ga){sub 2}Se{sub 3.5} were prepared by rf sputtering from stoichiometric CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} (x=0.6) and Na mixture target. The composition of the thin films fabricated in the ratio of [Na]/[Cu(In,Ga)Se{sub 2}] above 5{percent} was changed from the stoichiometric composition of Cu(In,Ga)Se{sub 2} to Cu-poor one, and identified as Cu:(In+Ga):Se=1:2:3.5. From the results of x-ray diffraction, the lattice parameters of these thin films were slightly smaller than that of Cu(In,Ga)Se{sub 2} and, besides the peaks appearing for chalcopyrite structure Cu(In,Ga)Se{sub 2}, the additional peak was observed. The optical band gap is increased from 1.24 to 1.36 eV with increasing the [Na]/[Cu(In,Ga)Se{sub 2}] ratio from 0{percent} to 10{percent} in the target. These films showed n- or p-type conduction. {copyright} {ital 1997 American Institute of Physics.}
OSTI ID:
504579
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English