Preparation of Cu(In,Ga){sub 2}Se{sub 3.5} thin films by radio frequency sputtering from stoichiometric Cu(In,Ga)Se{sub 2} and Na{sub 2}Se mixture target
- Department of Electric and Electronic Engineering, Toyohashi University of Technology, Toyohashi 441 (Japan)
- Department of Electrical Engineering, Wakayama College of Technology, Gobo 644 (Japan)
Defect chalcopyrite thin films of Cu(In,Ga){sub 2}Se{sub 3.5} were prepared by rf sputtering from stoichiometric CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} (x=0.6) and Na mixture target. The composition of the thin films fabricated in the ratio of [Na]/[Cu(In,Ga)Se{sub 2}] above 5{percent} was changed from the stoichiometric composition of Cu(In,Ga)Se{sub 2} to Cu-poor one, and identified as Cu:(In+Ga):Se=1:2:3.5. From the results of x-ray diffraction, the lattice parameters of these thin films were slightly smaller than that of Cu(In,Ga)Se{sub 2} and, besides the peaks appearing for chalcopyrite structure Cu(In,Ga)Se{sub 2}, the additional peak was observed. The optical band gap is increased from 1.24 to 1.36 eV with increasing the [Na]/[Cu(In,Ga)Se{sub 2}] ratio from 0{percent} to 10{percent} in the target. These films showed n- or p-type conduction. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 504579
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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