Preparation of CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films on Si substrates

Book · Sat Dec 31 04:00:00 EST 1994

OSTI ID:208034

Yamamoto, Yukio ^[1]; Yamaguchi, Toshiyuki; Suzuki, Masayoshi ^[2]; Demizu, Yasutaka; Yoshida, Akira ^[3]

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1. Fukui Coll. of Technology, Geshi (Japan)
2. Wakayama Coll. of Technology, Nada (Japan)
3. Toyohashi Univ. of Technology, Tempaku (Japan)

For fabricating efficient tandem solar cells, CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films have been prepared on Si(100), Si(110) and Si(111) substrates in the temperature range (R.T.{approximately}400 C) by rf sputtering. From EPMA analysis, these sputtered thin films are found to be nearly stoichiometric over the whole substrate temperature range, irrespective of the azimuth plane of the Si substrate. XPS studies showed that the compositional depth profile in these thin films is uniform. X-ray diffraction analysis indicated that all the thin films had a chalcopyrite structure. CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films were strongly oriented along the (112) plane with increasing the substrate temperature, independent of the azimuth plane of the Si substrate, suggesting the larger grain growth.

• OSTI ID: 208034
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
COPPER SELENIDE SOLAR CELLS
COPPER SELENIDES
ELECTRON DIFFRACTION
ELECTRON MICROPROBE ANALYSIS
EXPERIMENTAL DATA
FABRICATION
GALLIUM SELENIDES
GRADED BAND GAPS
INDIUM SELENIDE SOLAR CELLS
INDIUM SELENIDES
MORPHOLOGY
PHOTOELECTRON SPECTROSCOPY
SILICON
SPUTTERING
STOICHIOMETRY
VAPOR DEPOSITED COATINGS
X-RAY SPECTROSCOPY