Morphology of precursors and CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} thin films prepared by a two-stage selenization process
- Florida Solar Energy Center, Cape Canaveral, Florida 32920-4099 (United States)
- National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
The morphology of sequentially sputtered metallic precursors and CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} thin films prepared using a novel two-stage selenization process was found to change from initially very smooth layers with a root-mean-square (rms) surface roughness of {lt}10 A to coalescing grains with a fine ({similar_to}200 A) subgrain structure, three-dimensional {similar_to}9000 A size islands, and finally to compact, well-faceted, large {similar_to}1 {mu}m grain-size CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} thin films with a rms roughness of 950--1500 A. {ital In} {ital situ} homogenization of Cu-rich precursors prior to the first selenization and a maximum selenization temperature of 550--560 {degree}C that provided beneficial fluxing action of copper selenide improved the morphology of completed CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} thin films and the photovoltaic conversion efficiency of the solar cells. {copyright} {ital 1995} {ital American} {ital Vacuum} {ital Society}
- OSTI ID:
- 64946
- Journal Information:
- Journal of Vacuum Science and Technology, A, Vol. 13, Issue 3; Other Information: PBD: May 1995
- Country of Publication:
- United States
- Language:
- English
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