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Title: High-efficiency CuIn[sub [ital x]]Ga[sub 1[minus][ital x]]Se[sub 2] solar cells made from (In[sub [ital x]],Ga[sub 1[minus][ital x]])[sub 2]Se[sub 3] precursor films

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.112670· OSTI ID:7040158
; ; ; ;  [1];  [2]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
  2. University of Colorado, Boulder, Colorado 80309-0390 (United States)

In, Ga, and Se were coevaporated to form precursor films of (In[sub [ital x]],Ga[sub 1[minus][ital x]])[sub 2]Se[sub 3]. The precursors were then converted to CuIn[sub [ital x]]Ga[sub 1[minus][ital x]]Se[sub 2] by exposure to a flux of Cu and Se. The final films were smooth, with tightly packed grains, and had a graded Ga content as a function of film depth. Photovoltaic devices made from these films showed good tolerance in device efficiency to variations in film composition. A device made from these films resulted in the highest total-area efficiency measured for any non-single-crystal, thin-film solar cell, at 15.9%.

DOE Contract Number:
AC02-83CH10093
OSTI ID:
7040158
Journal Information:
Applied Physics Letters; (United States), Vol. 65:2; ISSN 0003-6951
Country of Publication:
United States
Language:
English