CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} and CdTe PV solar cells
- Florida Solar Energy Center, 300 State Rd 401, Cape Canaveral, Florida 32920-4099 (United States)
Higher indium proportion in the first precursor was employed to eliminate pits in CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} films prepared by two Se-vapor selenizations of metallic precursors. CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} films had large, faceted grains, and a near-optimum composition Cu:In:Ga:Se 24.25:22.21:4.40:49.14. Ga incorporated using a Cu-Ga(22 at. {percent}) alloy target was enhanced by optimizing the time-temperature profiles of selenizations. CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} solar cells gave {ital V}{sub oc} of 451.8 mV, {ital J}{sub sc} of 34.5 mA, FF of 57.87{percent}, total area efficiency of 9.02{percent}. CdTe thin films were prepared by heat treatment of magnetron-sputtered elemental Cd/Te stacks. Formation of extraneous oxide phases was avoided by optimizing ambients, temperature, and CdCl{sub 2} treatment. CdTe solar cells gave maximum {ital V}{sub oc} of {approximately}600 mV, {ital J}{sub sc} of {approximately}5 mA.cm{sup {minus}2}, very low FF and efficiency probably due to blocking layer or junction away from CdS{backslash}CdTe interface. {copyright} {ital 1996 American Institute of Physics.}
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 450121
- Report Number(s):
- CONF-9605265-; ISSN 0094-243X; TRN: 9703M0050
- Journal Information:
- AIP Conference Proceedings, Vol. 353, Issue 1; Conference: 13. NREL photovoltaics program review meeting, Lakewood, CO (United States), 16-19 May 1996; Other Information: PBD: Jan 1996
- Country of Publication:
- United States
- Language:
- English
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