A 10% Cu(In,Ga)Se{sub 2} based photovoltaic structure formed by electrodeposition and subsequent thermal processing

Journal Article · Thu Oct 01 00:00:00 EDT 1998 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1838851· OSTI ID:659185

Sebastian, P J; Calixto, M E ^[1]; Bhattacharya, R N; Noufi, R ^[2]

---

1. UNAM, Temixco (Mexico). Energy Research Center
2. National Renewable Energy Lab., Golden, CO (United States)

CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} (CIGS) thin films were formed from an electrodeposited CuInSe{sub 2} (CIS) precursor by thermal processing in vacuum in which the film stoichiometry was adjusted by adding In, Ga, and Se. The structure, composition, morphology and opto-electronic properties of the as-deposited and selenized CIS precursors were characterized by various techniques. A 10% CIGS based thin film solar cell was developed using the electrodeposited and thermally processed film. The cell structure consisted of Mo/CIGS/CdS/ZnO/MgF{sub 2}. The cell parameters such as J{sub SC}, V{sub OC}, FF, and {eta} were determined from I-V characterization of the cell.

• Sponsoring Organization: USDOE
• OSTI ID: 659185
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 10 Vol. 145; ISSN JESOAN; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CHEMICAL COMPOSITION
COPPER SELENIDE SOLAR CELLS
ELECTRICAL PROPERTIES
ELECTRODEPOSITION
GALLIUM SELENIDES
HEAT TREATMENTS
INDIUM SELENIDES
MICROSTRUCTURE
OPTICAL PROPERTIES
PERFORMANCE