Cu (In,Ga)Se{sub 2} thin films and solar cells prepared by selenization of metallic precursors
- International Solar Electric Technology, 8635 Aviation Boulevard, Inglewood, California 90301 (United States)
- Physics Department, Colorado State University, Fort Collins, Colorado 80523 (United States)
- National Renewable Energy Laboratory (NREL), 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
CuIn{sub (1{minus}{ital x})}Ga{sub {ital x}}Se{sub 2} (CIGS) thin films with Ga ratio, {ital x}, ranging from 0.55 to 0.75 were grown on Mo/glass substrates by the selenization of metallic precursors in a H{sub 2}Se atmosphere. Without a postdeposition annealing step the films were found to have a highly graded composition that became Ga rich near the absorber/Mo interface. A high-temperature annealing step promoted diffusion of Ga to the surface region of the films. These absorbers were used to fabricate glass/Mo/CIGS/CdS/ZnO thin-film solar cells with open-circuit voltages ranging from 0.4 to 0.74 V and efficiencies approaching 12{percent}. Devices, as well as the absorber layers, were characterized. {copyright} {ital 1996 American Vacuum Society}
- OSTI ID:
- 367186
- Journal Information:
- Journal of Vacuum Science and Technology, A, Vol. 14, Issue 4; Other Information: PBD: Jul 1996
- Country of Publication:
- United States
- Language:
- English
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