Effect of Na-doped Mo on Selenization Pathways for CuGa/In Metallic Precursors

Conference · Mon Dec 31 23:00:00 EST 2012

OSTI ID:1121797

Krishnan, Rangarajan ^[1]; Tong, Gabriel ^[1]; Kim, Woo Kyoung ^[2]; Payzant, E Andrew ^[3]; Adelhelm, Christoph ^[4]; Franzke, Enrico ^[4]; Winkler, Jörg ^[4]; Anderson, Timothy J ^[1]

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1. University of Florida
2. Yeungnam University, Korea
3. ORNL
4. Plansee SE, Technologiezentrum, Austria

Reaction pathways were followed for selenization of CuGa/In precursor structures using in-situ high temperature X-ray diffraction (HTXRD). Precursor films were deposited on Na-free and Na-doped Mo (3 and 5 at %)/Na-free glass. The precursor film was constituted with CuIn, In, Cu9Ga4, Cu3Ga, Cu16In9 and Mo. HTXRD measurements during temperature ramp selenization showed CIS formation occurs first, followed by CGS formation, and then mixing on the group III sub-lattice to form CIGS. CIGS formation was observed to be complete at ~450 C for samples deposited on 5 at % Na-doped Mo substrates. MoSe2 formation was evidenced after the CIGS synthesis reaction was complete. The Ga distribution in the annealed CIGS was determined by Rietveld refinement. Isothermal reaction studies were conducted for CIGS (112) formation in the temperature range 260-320 C to estimate the rate constants.

• Research Organization: Oak Ridge National Laboratory (ORNL); High Temperature Materials Laboratory (HTML)
• Sponsoring Organization: EE USDOE - Office of Energy Efficiency and Renewable Energy (EE)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1121797
• Country of Publication: United States
• Language: English