In-situ observation of Selenization of Cu-Ga-In Metallic Precursors
- University of Florida
- ORNL
The reaction pathway of Cu(In1-x,Gax)Se2 formation by the selenization of Cu-Ga-In/Mo/glass precursors was investigated using in-situ high-temperature X-ray diffraction (HT-XRD). The room-temperature XRD pattern shows that Cu11In9, CuIn, and pure In formed during MBE-deposition of the precursor. Selenium powder was placed in wells on the HT-XRD sample holder to provide a Se ambient during selenization. The in-situ HT-XRD observation of selenization of precursors showed that the selenization process of Cu-Ga-In/Mo/glass produces an intermediate CuSe phase in the temperature range of 260 to 370degC. The formation of CIGS is initiated at approximately 260degC, which is close to the initial appearance of CuSe. MoSe2 formation was detected at temperature above approximately 400degC. The Ga composition (x= 0.35{approx}0.39) of the resulting CIGS as estimated by the cell refinement method of XRD data suggests partial evaporation of indium during the temperature ramp annealing
- Research Organization:
- Oak Ridge National Laboratory (ORNL); High Temperature Materials Laboratory
- Sponsoring Organization:
- EE USDOE - Office of Energy Efficiency and Renewable Energy (EE)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 931244
- Country of Publication:
- United States
- Language:
- English
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