12.3% efficient CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2}-based device from electrodeposited precursor

Journal Article · Tue Apr 01 04:00:00 EST 1997 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1837599· OSTI ID:509393

Bhattacharya, R N; Wiesner, H; Berens, T A; Matson, R J; Keane, J; Ramanathan, K; Swartzlander, A; Mason, A; Noufi, R N ^[1]

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1. National Renewable Energy Lab., Golden, CO (United States)

Of the emerging materials for solar cell applications, CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} (CIGS) is a leading candidate and has received considerable attention in recent years. Copper-indium-gallium-selenium (Cu-In-Ga-Se) precursor thin films have been prepared by electrodeposition techniques on molybdenum substrates. The films have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, x-ray diffraction, electron probe microanalysis, current-voltage characteristics, spectral response, and electron-beam-induced current. Additional In or Cu, Ga, and Se have been added to the electrodeposited precursor film by physical evaporation to adjust the final composition to CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2}, and allowed to crystallize at 550 C. A ZnO/CdS/CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} device fabricated using electrodeposited Cu-In-Ga-Se precursor layers resulted in an efficiency of 12.3%.

• Sponsoring Organization: USDOE
• OSTI ID: 509393
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 4 Vol. 144; ISSN JESOAN; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
COPPER SELENIDE SOLAR CELLS
ELECTRODEPOSITED COATINGS
ELECTRODEPOSITION
FABRICATION
GALLIUM SELENIDES
INDIUM SELENIDE SOLAR CELLS
PERFORMANCE
QUANTUM EFFICIENCY