12.3% efficient CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2}-based device from electrodeposited precursor
- National Renewable Energy Lab., Golden, CO (United States)
Of the emerging materials for solar cell applications, CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} (CIGS) is a leading candidate and has received considerable attention in recent years. Copper-indium-gallium-selenium (Cu-In-Ga-Se) precursor thin films have been prepared by electrodeposition techniques on molybdenum substrates. The films have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, x-ray diffraction, electron probe microanalysis, current-voltage characteristics, spectral response, and electron-beam-induced current. Additional In or Cu, Ga, and Se have been added to the electrodeposited precursor film by physical evaporation to adjust the final composition to CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2}, and allowed to crystallize at 550 C. A ZnO/CdS/CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} device fabricated using electrodeposited Cu-In-Ga-Se precursor layers resulted in an efficiency of 12.3%.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 509393
- Journal Information:
- Journal of the Electrochemical Society, Vol. 144, Issue 4; Other Information: PBD: Apr 1997
- Country of Publication:
- United States
- Language:
- English
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