Polycrystalline CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} thin film PV solar cells prepared by two-stage selenization process using Se vapor
- Florida Solar Energy Center, Cape Canaveral, FL (United States)
- Univ. of Delaware, Newark, DE (United States). Inst. of Energy Conversion
Novel two-stage Se vapor selenization of magnetron sputtered metallic precursors and Ga incorporation using single Cu-Ga(22 at.%) alloy target have been developed for preparation of well-adherent, large, compact, well-faceted polyhedral grain CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} thin films having optimum composition Cu:In:Ga:Se of 22.95:25.03:1.40:50.63. Cu-In-Ga precursor homogenization by in situ heat-treatment at {approximately}90 C for 10 minutes prior to first selenization, selenization temperature of 550--560 C, and Se vapor incidence rate of 50 {angstrom}/sec resulted in improved morphology of completed CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} thin films, and solar cells with open circuit voltage of 377 mV, short circuit current density of 34.8 mA, fill factor FF of 62.5%, active area efficiency of 8.2% (total area efficiency 5.8% limited by FF 49.1%) and fairly constant spectral response over the spectral range.
- OSTI ID:
- 208040
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
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