Techniques for increasing Ga content in CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} thin films prepared by two-stage selenization process
- Florida Solar Energy Center, 1679 Clearlake Road, Florida 32922-5703 (United States)
A Cu-Ga(66 at.{percent}) alloy target was employed for enhancing the gallium content in CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} films prepared by two Se-vapor selenizations of metallic precursors. Combination with a Cu-Ga(22 at.{percent}) sputtering target allowed preparation of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} films with a graded profile. Gallium content Ga{sub x} near the surface was raised to the range 0.28{endash}0.32, while an even higher amount of gallium of up to 0.40 was obtained in the bulk of the films. Efficiency of solar cells prepared from CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} films with moderately enhanced gallium content was 8.5{percent}. Higher gallium proportions seem to be correlated with the formation of Cu-rich phases, surface inhomogeneities, and possibly a highly resistive phase. This combined with inferior crystallinity deteriorated solar cell efficiency. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 552861
- Report Number(s):
- CONF-961178--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 394; ISSN 0094-243X; ISSN APCPCS
- Country of Publication:
- United States
- Language:
- English
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