Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization

Patent · Tue Oct 18 04:00:00 EDT 1994

OSTI ID:6893589

Tuttle, J R; Contreras, M A; Noufi, R; Albin, D S

Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

• DOE Contract Number: AC02-83CH10093
• Assignee: Midwest Research Inst., Kansas City, MO (United States)
• Patent Number(s): US 5356839; A
• Application Number: PPN: US 8-045860
• OSTI ID: 6893589
• Country of Publication: United States
• Language: English

Related Subjects

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CHALCOGENIDES
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COPPER COMPOUNDS
COPPER SELENIDES
FABRICATION
GALLIUM COMPOUNDS
GALLIUM SELENIDES
INDIUM COMPOUNDS
INDIUM SELENIDES
MATERIALS
PROCESS CONTROL
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TRANSITION ELEMENT COMPOUNDS