Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization

Patent · Tue Oct 18 00:00:00 EDT 1994

OSTI ID:6893589

Tuttle, J R; Contreras, M A; Noufi, R; Albin, D S

Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

• DOE Contract Number: AC02-83CH10093
• Assignee: Midwest Research Inst., Kansas City, MO (United States)
• Patent Number(s): US 5356839; A
• Application Number: PPN: US 8-045860
• OSTI ID: 6893589
• Resource Relation: Patent File Date: 12 Apr 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COPPER SELENIDES
FABRICATION
GALLIUM SELENIDES
INDIUM SELENIDES
CHEMICAL COMPOSITION
PROCESS CONTROL
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
CHALCOGENIDES
CONTROL
COPPER COMPOUNDS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MATERIALS
SELENIDES
SELENIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360601* - Other Materials- Preparation & Manufacture