Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors

Patent · Tue Jan 01 00:00:00 EST 1991

OSTI ID:868066

Biefeld, Robert M ^[1]; Dawson, L Ralph ^[1]; Fritz, Ian J ^[1]; Kurtz, Steven R ^[1]; Zipperian, Thomas E ^[1]

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1. Albuquerque, NM

A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.

• Research Organization: AT&T
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 5065205
• OSTI ID: 868066
• Country of Publication: United States
• Language: English

Related Subjects

wavelength
inassb
strained-layer
superlattice
photoconductive
detectors
device
12
radiation
including
active
semiconductor
region
extending
substrate
exposed
comprising
alternating
layers
inas
1-x
sb
compounds
75
pair
spaced
electrodes
provided
changes
spaced electrodes
strained-layer superlattice
region extending
wavelength radiation
alternating layers
active semiconductor
photoconductive detector
radiation including
layer superlattice
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