High photoconductive gain in lateral InAsSb strained-layer superlattice infrared detectors

Journal Article · Mon Nov 14 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100336· OSTI ID:6743503

Kurtz, S R; Biefeld, R M; Dawson, L R; Fritz, I J; Zipperian, T E

Both large photoconductive gain and long wavelength photoresponse were observed in lateral photodetectors constructed from type II, InAsSb, strained-layer superlattices. In a novel, four-layer superlattice, gain values as large as 90 are reported with a long wavelength cutoff of 8.7 ..mu..m at 77 K. The gain is sensitive to the structure and composition of the superlattice, and the sweepout of minority carriers is eliminated with the appropriate contacts.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• OSTI ID: 6743503
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:20; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360604* -- Materials-- Corrosion
Erosion
& Degradation
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
AMPLIFICATION
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
CRYSTAL DOPING
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
FABRICATION
GAIN
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
INFRARED RADIATION
LOW TEMPERATURE
NUMERICAL DATA
PHOTOCONDUCTIVITY
PHOTODETECTORS
PHOTOSENSITIVITY
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SENSITIVITY
SUPERLATTICES