High photoconductive gain in lateral InAsSb strained-layer superlattice infrared detectors

Journal Article · Mon Nov 14 00:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100336· OSTI ID:6743503

Kurtz, S R; Biefeld, R M; Dawson, L R; Fritz, I J; Zipperian, T E

Both large photoconductive gain and long wavelength photoresponse were observed in lateral photodetectors constructed from type II, InAsSb, strained-layer superlattices. In a novel, four-layer superlattice, gain values as large as 90 are reported with a long wavelength cutoff of 8.7 ..mu..m at 77 K. The gain is sensitive to the structure and composition of the superlattice, and the sweepout of minority carriers is eliminated with the appropriate contacts.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• OSTI ID: 6743503
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 53:20
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ANTIMONY COMPOUNDS
CHARGE CARRIERS
PHOTOCONDUCTIVITY
INDIUM ARSENIDES
PHOTODETECTORS
GAIN
PHOTOSENSITIVITY
CRYSTAL DOPING
EXPERIMENTAL DATA
FABRICATION
INFRARED RADIATION
LOW TEMPERATURE
SUPERLATTICES
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
INDIUM COMPOUNDS
INFORMATION
NUMERICAL DATA
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SENSITIVITY
360604* - Materials- Corrosion
Erosion
& Degradation
420800 - Engineering- Electronic Circuits & Devices- (-1989)