Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors

Patent · Tue Nov 12 00:00:00 EST 1991

OSTI ID:7131624

Biefeld, R M; Dawson, L R; Fritz, I J; Kurtz, S R; Zipperian, T E

This patent describes a high grain photoconductive device for 8 to 12 [mu]m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs[sub 1[minus]x]Sb[sub x] compounds having x [gt] 0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 [mu]m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.

• Assignee: US Dept. of Energy, Washington, DC (United States)
• Patent Number(s): US 5065205; A
• Application Number: PPN: US 7-350814
• OSTI ID: 7131624
• Resource Relation: Patent File Date: 12 May 1989
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ANTIMONY COMPOUNDS
OPTICAL PROPERTIES
INDIUM ARSENIDES
PHOTODETECTORS
FABRICATION
PHOTOCHEMISTRY
SEMICONDUCTOR MATERIALS
SUPERLATTICES
WAVELENGTHS
ARSENIC COMPOUNDS
ARSENIDES
CHEMISTRY
INDIUM COMPOUNDS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
140501* - Solar Energy Conversion- Photovoltaic Conversion
360606 - Other Materials- Physical Properties- (1992-)
400500 - Photochemistry