Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors

Patent · Tue Jan 01 04:00:00 EST 1991

OSTI ID:868066

Biefeld, Robert M ^[1]; Dawson, L Ralph ^[1]; Fritz, Ian J ^[1]; Kurtz, Steven R ^[1]; Zipperian, Thomas E ^[1]

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1. Albuquerque, NM

A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.

• Research Organization: AT & T CORP
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 5065205
• OSTI ID: 868066
• Country of Publication: United States
• Language: English

Related Subjects

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1-x
12
75
active
active semiconductor
alternating
alternating layers
changes
compounds
comprising
detectors
device
electrodes
exposed
extending
inas
inassb
including
layer superlattice
layers
pair
photoconductive
photoconductive detector
provided
radiation
radiation including
region
region extending
sb
semiconductor
spaced
spaced electrodes
strained-layer
strained-layer superlattice
substrate
superlattice
wavelength
wavelength radiation