Demonstration of an InAsSb strained-layer superlattice photodiode

Journal Article · Mon May 09 04:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99087· OSTI ID:5275848

Kurtz, S R; Dawson, L R; Zipperian, T E; Lee, S R

A photodiode consisting of a p-n junction embedded in an InAs/sub 0.09/Sb/sub 0.91//InSb strained-layer superlattice with equal 130-A-thick layers was grown using molecular beam epitaxy. This nonoptimized device exhibited photoresponse out to a wavelength of 8.7 ..mu..m at 77 K. The resistance and the minority-carrier diffusion length of the photodiode result in a detectivity (3 x 10/sup 9/ cm Hz/sup 1//sup ///sup 2//W) at 7 ..mu..m that is within one order of magnitude of the detectivity of the best HgCdTe detectors at that wavelength.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5275848
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:19; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
CHARGED-PARTICLE TRANSPORT
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EPITAXY
FABRICATION
INDIUM ARSENIDES
INDIUM COMPOUNDS
JUNCTIONS
MOLECULAR BEAM EPITAXY
P-N JUNCTIONS
PHOTODIODES
PHOTOSENSITIVITY
PHYSICAL PROPERTIES
PNICTIDES
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SENSITIVITY
SUPERLATTICES