Radiation effects in InAsSb strained-layer superlattice photodiodes induced by dose-rate and transient x-ray environments

Conference · Mon Jan 01 04:00:00 EST 1990

OSTI ID:6709597

Kurtz, S R; Dawson, L R ^[1]; Snyder, J G ^[2]

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1. Sandia National Labs., Albuquerque, NM (USA)
2. Air Force Weapons Lab., Kirtland AFB, NM (USA)

A side-by-side measurement was made of the gamma-flux noise in an InAsSb strained-layer superlattice (SLS) photodiode and a comparable HgCdTe photodiode. Correcting for minor differences in detector quantum efficiency and area, we found that the SLS can operate in a gamma-flux {ge} 10x that limiting HgCdTe detector performance. Transient photoresponse measurements on an InAsSb SLS detector were performed using a pulsed x-ray source. A detector recovery time of 150 nsec was observed, and modeling of the transient response predicted a minority carrier lifetime of 350 nsec and a diffusion length of 2 {mu}m. 10 refs., 4 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6709597
• Report Number(s): SAND-90-0955C; CONF-900396--4; ON: DE90015000
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
INDIUM ANTIMONIDES
INDIUM COMPOUNDS
IONIZING RADIATIONS
MERCURY COMPOUNDS
MERCURY TELLURIDES
PERFORMANCE
PHOTOCONDUCTIVITY
PHOTODETECTORS
PHOTODIODES
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SUPERLATTICES
TELLURIDES
TELLURIUM COMPOUNDS
X RADIATION