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Title: Structural and electronic studies of a:Si Ge:H alloys

Technical Report ·
DOI:https://doi.org/10.2172/6956436· OSTI ID:6956436
 [1]
  1. Harvard Univ., Cambridge, MA (USA)

This report describes a research program to investigate hydrogenated amorphous silicon-germanium alloys (a-Sil-xGex:H) for solar-cell applications. Specifically, studies were carried out to determine why these low-band-gap alloys exhibit photo-electronic properties inferior to those of hydrogenated amorphous silicon (a-Si:H). Two contributors to this phenomenon were established: (1) An amorphous semiconductor of smaller band gap than a-Si:H, but possessing tails to the conduction band and valence band densities of states of the same extent as in a-Si:H, and also possessing at least the same density of defect-related states, was bound to have shorter electron and hole lifetimes. (2) The structure of alloy films (whether with smaller or larger band gaps than that of a a-Si:H), exhibited considerable inhomogeneity; this led to an even greater reduction in the quantum-efficiency mobility lifetime product. The extensive studies confirmed that a-Ge:H is much poorer than a-Si:H from a photoelectronic standpoint.

Research Organization:
Solar Energy Research Inst. (SERI), Golden, CO (United States); Harvard Univ., Cambridge, MA (USA)
Sponsoring Organization:
DOE/CE
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6956436
Report Number(s):
SERI/TP-211-3655; ON: DE90000313
Country of Publication:
United States
Language:
English