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Title: Microscopic Origins of Metastable Effects in a-Si:H and Deep Defect Characterization in a-Si,Ge:H Alloys: Final Subcontract Report, 1 February 1991 - 31 January 1994

Technical Report ·
DOI:https://doi.org/10.2172/10183684· OSTI ID:10183684

This research supported by NREL Subcontract XG-1-10063-1 over the past three years has involved, first of all, a fairly complete characterization of a two series of a-Si{sub 1-x}Ge{sub x}:H samples: a series of 9 films grown at the University of Delaware by the photo-CVD method (for 0.29 {<=} {times} {<=} 0.62) and series of 6 films grown at U.S.S.C. by the glow discharge method (for 0.20 {<=} {times} {<=} 0.50). Both these series of samples seem to represent what is close to the {open_quotes}state-of-the-art{close_quotes} in current a-Si,Ge:H alloys. The authors detailed comparison of the properties of the glow discharge material with the photo-CVD samples show remarkable similarities rather than significant differences. In particular, measurements of these samples: (1) allowed the assignment of defect energy levels from a detailed analysis of transient sub-band-gap photocapacitance and photocurrent spectra. (2) The authors found the density of deep defects to increase exponentially with the germanium content. (3) The authors found that the trapping lifetimes related {mu}{tau} products for holes decrease in direct proportion to the density of midgap defects in these samples, at least up to Ge fractions of 50at.%. (4) The authors have also made significant progress toward identifying both the optical and thermal defect transitions in the a-Si,Ge:H alloys.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
AC36-08GO28308
OSTI ID:
10183684
Report Number(s):
NREL/TP-451-7163; ON: DE94011887; TRN: 94:008462
Resource Relation:
Other Information: PBD: Sep 1994
Country of Publication:
United States
Language:
English