Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology

Menk, L. A.; Josell, D.; Moffat, T. P.; Baca, E.; Blain, M. G.; Smith, A.; Dominguez, J.; McClain, J.; Yeh, P. D.; Hollowell, A. E.

doi:10.1149/2.0091901jes

Title: Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology

Journal Article · Fri Nov 02 00:00:00 EDT 2018 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/2.0091901jes· OSTI ID:1524208

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Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)

An electrodeposition process for void-free bottom-up filling of sub-millimeter scale through silicon vias (TSVs) with Cu is detailed. The 600 μm deep and nominally 125 μm diameter metallized vias were filled with Cu in less than 7 hours under potentiostatic control. The electrolyte is made up of 1.25 mol/L CuSO₄ – 0.25 mol/L CH₃SO₃H with polyether and halide additions that selectively suppress metal deposition on the free surface and side walls. A brief qualitative discussion of the procedures used to identify and optimize the bottom-up void-free feature filling is presented.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA-0003525

OSTI ID:: 1524208

Report Number(s):: SAND-2018-9049J; 667193

Journal Information:: Journal of the Electrochemical Society, Vol. 166, Issue 1; ISSN 0013-4651

Publisher:: The Electrochemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 22 works

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