Exploring the Limits of Bottom-Up Gold Filling to Fabricate Diffraction Gratings

Josell, D.; Ambrozik, S.; Williams, M. E.; Hollowell, A. E.; Arrington, C.; Muramoto, S.; Moffat, T. P.

doi:10.1149/2.1131915jes

Exploring the Limits of Bottom-Up Gold Filling to Fabricate Diffraction Gratings

Journal Article · Tue Nov 26 23:00:00 EST 2019 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/2.1131915jes· OSTI ID:1697994

^[1]; ^[1]; Williams, M. E. ^[1]; ^[2]; Arrington, C. ^[2]; Muramoto, S. ^[1]; ^[1]

National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Gold deposition on rotating disk electrodes, Bi³⁺ adsorption on planar Au films and superconformal Au filling of trenches up to 45 μm deep are examined in Bi³⁺-containing Na₃Au(SO₃)₂ electrolytes with pH between 9.5 and 11.5. Higher pH is found to increase the potential-dependent rate of Bi³⁺ adsorption on planar Au surfaces, shortening the incubation period that precedes active Au deposition on planar surfaces and bottom-up filling in patterned features. Decreased contact angles between the Au seeded sidewalls and bottom-up growth front also suggest improved wetting. The bottom-up filling dynamic in trenches is, however, lost at pH 11.5. The impact of Au concentration, 80 mmol/L versus 160 mmol/L Na₃Au(SO₃)₂, on bottom-up filling is examined in trenches up to ≈ 210 μm deep with aspect ratio of depth/width ≈ 30. The microstructures of void-free, bottom-up filled trench arrays used as X-ray diffraction gratings are characterized by scanning electron microscopy (SEM) and Electron Backscatter Diffraction (EBSD), revealing marked spatial variation of the grain size and orientation within the filled features.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); National Institutes of Health (NIH); National Institute of Standards and Technology (NIST)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1697994

Report Number(s):: SAND--2019-11097J; 685641

Journal Information:: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 16 Vol. 166; ISSN 0013-4651

Publisher:: IOP Publishing - The Electrochemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Spatial-Temporal Modeling of Extreme Bottom-up Filling of Through-Silicon-Vias Wheeler, Daniel figshare https://doi.org/10.6084/m9.figshare.1041795.v1	text	January 2014

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