Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Bottom-Up Copper Filling of Millimeter Size Through Silicon Vias

Journal Article · · Journal of the Electrochemical Society
DOI:https://doi.org/10.1149/2.0321901jes· OSTI ID:1490759
; ; ; ;
Not Available
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
SPP-funded work; USDOE
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1490759
Alternate ID(s):
OSTI ID: 1492359
Report Number(s):
SAND--2018-14027J; /jes/166/1/D3254.atom
Journal Information:
Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 1 Vol. 166; ISSN 0013-4651
Publisher:
The Electrochemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

References (28)

A path: from electroplating through lithographic masks in electronics to LIGA in MEMS journal January 1997
Inverse analysis of accelerator distribution in copper through silicon via filling journal November 2012
Parameters Analysis of TSV Filling Models of Distinct Chemical Behaviours of Additives journal December 2016
Copper electroplating into deep microvias for the “SiP” application journal May 2011
SEIRAS Study of Chloride-Mediated Polyether Adsorption on Cu journal August 2018
Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs) journal March 2015
TSV plating using copper methanesulfonate electrolyte with single component suppressor conference September 2012
Damascene copper electroplating for chip interconnections journal September 1998
Superconformal film growth: Mechanism and quantification journal January 2005
A Method for Microvia-Fill Process Modeling in a Cu Plating System with Additives journal January 2007
An ALE Model for Prediction and Control of the Microvia Fill Process with Two Additives journal January 2008
Superconformal Copper Deposition in Through Silicon Vias by Suppression-Breakdown journal January 2018
Extreme Bottom-up Filling of Through Silicon Vias and Damascene Trenches with Gold in a Sulfite Electrolyte journal January 2013
Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology journal November 2018
Modeling Extreme Bottom-Up Filling of Through Silicon Vias journal January 2012
Modeling the Bottom-Up Filling of Through-Silicon vias Through Suppressor Adsorption/Desorption Mechanism journal January 2013
Copper Deep Via Filling with Selective Accelerator Deactivation by Polyethyleneimine journal January 2013
Cu Bottom-Up Filling for Through Silicon Vias with Growing Surface Established by the Modulation of Leveler and Suppressor journal January 2013
Extreme Bottom-Up Superfilling of Through-Silicon-Vias by Damascene Processing: Suppressor Disruption, Positive Feedback and Turing Patterns journal January 2012
Spatial-Temporal Modeling of Extreme Bottom-up Filling of Through-Silicon-Vias journal January 2013
Through-Silicon-Via (TSV) Filling by Electrodeposition of Cu with Pulse Current at Ultra-Short Duty Cycle journal January 2013
Numerical Simulation and Mechanism Analysis of Through-Silicon Via (TSV) Filling Using an Arbitrary Lagrange-Eulerian (ALE) Method journal January 2015
Stochastic Modeling of Polyethylene Glycol as a Suppressor in Copper Electroplating journal January 2014
Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias journal January 2016
Superconformal Nickel Deposition in Through Silicon Vias: Experiment and Prediction journal January 2018
Superconformal Bottom-Up Nickel Deposition in High Aspect Ratio Through Silicon Vias journal January 2016
Superconformal Bottom-Up Gold Deposition in High Aspect Ratio Through Silicon Vias journal January 2017
Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry journal January 2016

Similar Records

Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology
Journal Article · Thu Nov 01 20:00:00 EDT 2018 · Journal of the Electrochemical Society · OSTI ID:1524208
Development of a Scalable Two-Additive Electrodeposition System for Bottom-Up Copper Filling of Sub-Millimeter Through Silicon Vias.
Conference · Fri Nov 01 00:00:00 EDT 2019 · OSTI ID:1643295

Related Subjects

36 MATERIALS SCIENCE