Bottom-Up Copper Filling of Millimeter Size Through Silicon Vias

Josell, D.; Menk, L. A.; Hollowell, A. E.; Blain, M.; Moffat, T. P.

doi:10.1149/2.0321901jes

Title: Bottom-Up Copper Filling of Millimeter Size Through Silicon Vias

Journal Article · Sat Jan 12 00:00:00 EST 2019 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/2.0321901jes· OSTI ID:1490759

;

; Blain, M.;

This work demonstrates void-free Cu filling of millimeter size Through Silicon Vias (mm-TSV) in an acid copper sulfate electrolyte using a combination of a polyoxamine suppressor and chloride, analogous to previous work filling TSV that were an order of magnitude smaller in size. For high chloride concentration (i.e., 1 mmol/L) bottom-up deposition is demonstrated with the growth front being convex in shape. Instabilities in filling profile arise as the growth front approaches the freesurface due to non-uniform coupling with electrolyte hydrodynamics Filling is negatively impacted by large lithography-induced reentrant notches that increase the via cross section at the bottom. In contrast, deposition from low chloride electrolytes, proceeds with a passive-active transition on the via sidewalls. For a given applied potential the location of the transition is fixed in time and the growth front is concave in nature reflecting the gradient in chloride surface coverage. Application of a suitable potential wave form enables the location of the sidewall transition to be advanced thereby giving rise to void-free filling of the TSV.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE; SPP-funded work

Grant/Contract Number:: NA0003525; AC04-94AL85000

OSTI ID:: 1490759

Alternate ID(s):: OSTI ID: 1492359

Report Number(s):: SAND-2018-14027J; /jes/166/1/D3254.atom

Journal Information:: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Vol. 166 Journal Issue: 1; ISSN 0013-4651

Publisher:: The Electrochemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 19 works

Citation information provided by
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