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Galvanostatic Plating with a Single Additive Electrolyte for Bottom-Up Filling of Copper in Mesoscale TSVs

Journal Article · · Journal of the Electrochemical Society
DOI:https://doi.org/10.1149/2.0271901jes· OSTI ID:1492855
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
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A methanesulfonic acid (MSA) electrolyte with a single suppressor additive was used for potentiostatic bottom-up filling of copper in mesoscale through silicon vias (TSVs). Conversly, galvanostatic deposition is desirable for production level full wafer plating tools as they are typically not equipped with reference electrodes which are required for potentiostatic plating. Potentiostatic deposition was used to determine the over-potential required for bottom-up TSV filling and the resultant current was measured to establish a range of current densities to investigate for galvanostatic deposition. Galvanostatic plating conditions were then optimized to achieve void-free bottom-up filling in mesoscale TSVs for a range of sample sizes.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1492855
Report Number(s):
SAND--2018-9018J; 667176
Journal Information:
Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 1 Vol. 166; ISSN 0013-4651
Publisher:
The Electrochemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

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Cited By (3)

Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology journal November 2018
Bromide Ion as a Leveler for High-Speed TSV Filling journal January 2019
Inhibition Effect of CTAB on Electrodeposition of Cu in Micro Via: Experimental and MD Simulation Investigations journal January 2019

Figures / Tables (7)

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Figure 6(p. 12)figure Figure 6
Figure 7(p. 14)figure Figure 7

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Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
3D Interconnects
Electrodeposition - Copper
MEMs
Microelectronics - Semiconductor Processing
TSV
Through Silicon Vias