Stochastic Gain Degradation in III-V Heterojunction Bipolar Transistors due to Single Particle Displacement Damage

Journal Article · Mon Nov 13 00:00:00 EST 2017 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/tns.2017.2772960· OSTI ID:1411609

Vizkelethy, Gyorgy ^[1]; Bielejec, Edward S. ^[1]; Aguirre, Brandon A. ^[1]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

As device dimensions decrease single displacement effects are becoming more important. We measured the gain degradation in III-V Heterojunction Bipolar Transistors due to single particles using a heavy ion microbeam. Two devices with different sizes were irradiated with various ion species ranging from oxygen to gold to study the effect of the irradiation ion mass on the gain change. From the single steps in the inverse gain (which is proportional to the number of defects) we calculated Cumulative Distribution Functions to help determine design margins. The displacement process was modeled using the Marlowe Binary Collision Approximation (BCA) code. The entire structure of the device was modeled and the defects in the base-emitter junction were counted to be compared to the experimental results. While we found good agreement for the large device, we had to modify our model to reach reasonable agreement for the small device.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000; NA0003525
• OSTI ID: 1411609
• Report Number(s): SAND-2017-7259J; 655204; TRN: US1800247
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 65, Issue 1; ISSN 0018-9499
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
42 ENGINEERING
Heterojunction Bipolar Transistors
displacement damage
single particle events
binary collision approximation