Degradation of InGaAs/InP double heterojunction bipolar transistors under electron irradiation
- Oregon State Univ., Corvallis, OR (United States). Dept. of Electrical and Computer Engineering
- Lucent Technologies, Holmdel, NJ (United States). Bell Labs.
- Arizona State Univ., Tempe, AZ (United States). Dept. of Electrical Engineering
The dc characteristics of InGaAs/InP double heterojunction bipolar transistors (DHBT`s) are studied under high-energy ({approximately}1 MeV) electron irradiation up to a fluence of 14.8 {times} 10{sup 15} electrons/cm{sup 2}. The devices show an increase in common-emitter current gain (h{sub fe}) at low levels of dose (<10{sup 15} electrons/cm{sup 2}) and a gradual decrease in h{sub fe} and an increase in output conductance for higher doses. The decrease in h{sub fe} is as much as {approximately}80% at low base currents ({approximately}10 {micro}A) after a cumulative dose of 14.8 {times} 10{sup 15} electrons/cm{sup 2}. The observed degradation effects in collector current-voltage (I-V) characteristics are studied quantitatively using a simple SPICE-like device model. The overall decrease in h{sub fe} is attributed to increased recombination in the emitter-base junction region caused by radiation-induced defects. The defects introduced in the collector-base junction region are believed to be responsible for the observed increase in the output conductance.
- Sponsoring Organization:
- Department of the Air Force, Washington, DC (United States)
- OSTI ID:
- 343620
- Journal Information:
- IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 5 Vol. 46; ISSN 0018-9383; ISSN IETDAI
- Country of Publication:
- United States
- Language:
- English
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