Degradation of dc characteristics of InGaAs/InP single heterojunction bipolar transistors under electron irradiation

Journal Article · Sat May 01 00:00:00 EDT 1999 · IEEE Transactions on Electron Devices

DOI:https://doi.org/10.1109/16.760388· OSTI ID:343619

Bandyopadhyay, A; Subramanian, S ^[1]; Chandrasekhar, S; Dentai, A G ^[2]; Goodnick, S M ^[3]

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1. Oregon State Univ., Corvallis, OR (United States). Dept. of Electrical and Computer Engineering
2. Lucent Technologies, Holmdel, NJ (United States). Bell Labs.
3. Arizona State Univ., Tempe, AZ (United States). Dept. of Electrical Engineering

The effects of high-energy ({approximately}1 MeV) electron irradiation on the dc characteristics of InGaAs/InP single heterojunction bipolar transistors (SHBT`s) are investigated. The device characteristics do not show any significant change for electron doses <10{sup 15}/cm{sup 2}. For higher doses, devices show a decrease in collector current, a degradation of common-emitter current gain, an increase in collector saturation voltage and an increase in the collector output conductance. A simple SPICE-like device model is developed to describe the dc characteristics of SHBT`s. The model parameters extracted from the measured dc characteristics of the devices before and after irradiation are used to get an insight into the physical mechanisms responsible for the degradation of the devices.

• Sponsoring Organization: Department of the Air Force, Washington, DC (United States)
• OSTI ID: 343619
• Journal Information: IEEE Transactions on Electron Devices, Vol. 46, Issue 5; Other Information: PBD: May 1999
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ELECTRICAL PROPERTIES
JUNCTION TRANSISTORS
HETEROJUNCTIONS
INDIUM ARSENIDES
GALLIUM ARSENIDES
INDIUM PHOSPHIDES
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
MATHEMATICAL MODELS