Proton Irradiation Effects on Sb-based Heterojunction Bipolar Transistors

Journal Article · Thu Jan 01 04:00:00 EST 2009 · Journal of Vacuum Science & Technology B

DOI:https://doi.org/10.1116/1.3246405· OSTI ID:967123

Lo, C. F. ^[1]; Kim, H. -Y. ^[2]; Kim, J. ^[2]; Chen, Shu-han ^[3]; Wang, Sheng-yu ^[3]; Chyi, Jen-inn ^[3]; Chou, B. Y. ^[4]; Chen, K. H. ^[4]; Wang, Y. l. ^[1]; Chang, C. Y. ^[1]; Pearton, S. J. ^[1]; Kravchenko, Ivan I ^[5]; Jang, S. ^[6]

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1. University of Florida
2. Korea University
3. National Central University, Taiwan
4. University of Florida, Gainesville
5. ORNL
6. Dankook University, Korea

In0.52Al0.48As/In0.39Ga0.61As0.77Sb0.23/In0.53Ga0.47As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2 1011 to 2 1015 protons/cm2. The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2 1011 cm-2, which was equivalent to around 40 years of exposure in low earth orbit, showed minimal changes in the junction ideality factor, generation recombination leakage current, current gain and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well-suited to space or nuclear industry applications.

• Research Organization: Oak Ridge National Laboratory (ORNL); Center for Nanophase Materials Sciences
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 967123
• Journal Information: Journal of Vacuum Science & Technology B, Journal Name: Journal of Vacuum Science & Technology B Journal Issue: 6 Vol. 27; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
HETEROJUNCTIONS
IRRADIATION
LEAKAGE CURRENT
NUCLEAR INDUSTRY
PROTONS
RADIATIONS
RECOMBINATION
TRANSISTORS