Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Journal Article · Sat Jan 01 04:00:00 EST 2011 · Journal of Vacuum Science & Technology B

DOI:https://doi.org/10.1116/1.3589808· OSTI ID:1014272

Lo, C. F. ^[1]; Ren, F. ^[1]; Chang, C. Y. ^[1]; Pearton, S. J. ^[1]; Chen, Shu-han ^[2]; Chyi, Jen-inn ^[2]; Wang, Sheng-yu ^[2]; Kravchenko, Ivan I ^[3]

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1. University of Florida
2. National Central University, Taiwan
3. ORNL

A trilevel resist system was employed to fabricate self-aligned, submicron emitter finger In0.52Al0.48As/ In0.42Ga0.58As0.77Sb0.23 / In0.53Ga0.47As double heterojunction bipolar transistors DHBTs. Selective wet-etchants were used to define the emitter fingers and to form an InGaAs guard-ring around the emitter fingers. Due to the low energy bandgap of the InGaAsSb base layer and type II base-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm2 and a high dc current gain of 123.8 for a DHBT with a 0.658.65 m2 emitter area were obtained. A unity gain cutoff frequency fT of 260 GHz and a maximum oscillation frequency fmax of 485 GHz at JC =302 kA/cm2 were achieved.

• Research Organization: Oak Ridge National Laboratory (ORNL); Center for Nanophase Materials Sciences
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1014272
• Journal Information: Journal of Vacuum Science & Technology B, Journal Name: Journal of Vacuum Science & Technology B Journal Issue: 3 Vol. 29; ISSN 1071-1023
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
FABRICATION
HETEROJUNCTIONS
OSCILLATIONS
TRANSISTORS