Fabrication and Characterization of Self-aligned InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

Conference · Sat Oct 01 04:00:00 EDT 2011

DOI:https://doi.org/10.1149/1.3629960· OSTI ID:1028763

Lo, C. F. ^[1]; Chang, C. H. ^[1]; Chen, Shu-han ^[2]; Wang, Sheng-yu ^[2]; Chyi, Jen-inn ^[2]; Kravchenko, Ivan ^[3]; Pearton, S. J. ^[1]; Ren, F. ^[1]

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1. University of Florida
2. National Central University, Taiwan
3. ORNL

A trilevel resist system was employed to fabricate self-aligned,submicron emitter finger In0.52Al0.48As/In0.42Ga0.58As0.77Sb0.23/In0.53Ga0.47As double heterojunction bipolar transistors (DHBTs).Selective wet-etchants were used to define the emitter fingers andto form an InGaAs guard-ring around the emitter fingers. Due tothe low energy bandgap of the InGaAsSb base layer and type IIbase-collector junction, a low turn-on voltage of 0.38 V at 1 A/cm2and a high dc current gain of 123.8 for a DHBT with a 0.65 × 8.65μm2 emitter area were obtained. A unity gain cut-off frequency(fT) of 260 GHz and a maximum oscillation frequency (fmax) of 485GHz at JC = 302 kA/cm2 were achieved.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1028763
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
FABRICATION
HETEROJUNCTIONS
OSCILLATIONS
TRANSISTORS