High-speed InAlAs/InGaAs heterojunction bipolar transistors

Journal Article · Wed Jun 01 00:00:00 EDT 1988 · IEEE Electron Device Lett.; (United States)

DOI:https://doi.org/10.1109/55.727· OSTI ID:6228088

Fukano, H; Kawamura, Y; Takanashi, Y

InAlAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy (MBE) are fabricated. A cutoff frequency of 32 GHz for a collector current of 20 mA is achieved in the emitter area of 6 x 10-..mu..m/sup 2/ devices. The use of heavily doped and nondoped InGaAs layers as the emitter cap and collector, respectively, results in a reduction of the emitter and collector charging times; this, in turn, leads to the higher microwave performance of devices.

• Research Organization: NTT Opto-Electronics Labs., 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-01 (JP)
• OSTI ID: 6228088
• Journal Information: IEEE Electron Device Lett.; (United States), Journal Name: IEEE Electron Device Lett.; (United States) Vol. 9:6; ISSN EDLED
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
JUNCTIONS
MATERIALS
MICROWAVE RADIATION
MOLECULAR BEAM EPITAXY
PERFORMANCE
PNICTIDES
RADIATIONS
SEMICONDUCTOR JUNCTIONS
TECHNOLOGY ASSESSMENT