Degradation of Si{sub 1{minus}x}Ge{sub x} epitaxial heterojunction bipolar transistors by 1 MeV fast neutrons

Journal Article · Fri Dec 01 00:00:00 EST 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.488749· OSTI ID:203672

Ohyama, H; Hayama, K ^[1]; Vanhellemont, J; Poortmans, J; Caymax, M ^[2]; Takami, Y ^[3]; Sunaga, H ^[4]

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1. Kumamoto National Coll. of Technology (Japan)
2. IMEC, Leuven (Belgium)
3. Rikkyo Univ., Yokosuka, Kanagawa (Japan). Inst. for Atomic Energy
4. Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

Irradiation damage in n{sup +}-Si/p{sup +}-Si{sub 1{minus}x}Ge{sub x}/n-Si epitaxial heterojunction bipolar transistors (HBTs) by 1-MeV fast neutrons is studied as a function of fluence and germanium content for the first time. The degradation of the electrical performance of HBTs by irradiation increases with increasing fluence, while it decreases with increasing germanium content. The induced lattice defects in the base and the collector regions are studied by DLTS methods. In the base region, electron capture levels associated with interstitial boron are induced by irradiation, while two electron capture levels corresponding to the E centers and the divacancy are formed in the collector region. The device degradation of performance is then correlated with simulations of numbers of knock-on atoms. In order to examine the recovery behavior, isochronal thermal annealing is carried out for temperatures ranging from 75 to 300 C. Based on the recovery of electrical performance, it is pointed out that the electron capture levels induced in the base and collector regions are mainly responsible for the increase of base current and the decrease of collector current.

• OSTI ID: 203672
• Report Number(s): CONF-950716-; ISSN 0018-9499; TRN: 96:009631
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 42, Issue 6Pt1; Conference: 32. annual IEEE international nuclear and space radiation effects conference, Madison, WI (United States), 17-21 Jul 1995; Other Information: PBD: Dec 1995
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
JUNCTION TRANSISTORS
PHYSICAL RADIATION EFFECTS
SILICON
SILICON ALLOYS
GERMANIUM ALLOYS
NEUTRON FLUENCE
EXPERIMENTAL DATA
ELECTRICAL PROPERTIES
CRYSTAL DEFECTS
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K