Degradation and recovery of In{sub 0.53}Ga{sub 0.47}As photodiodes by 1-MeV fast neutrons

Journal Article · Sun Dec 01 04:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.556900· OSTI ID:445473

Ohyama, H; Hayama, K; Kudou, T; Hakata, T ^[1]; Vanhellemont, J ^[2]; Takami, Y ^[3]; Kohiki, S ^[4]; Sunaga, H ^[5]

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1. Kumamoto National College of Technology, Nishigoshi, Kumamoto (Japan)
2. IMEC, Leuven (Belgium)
3. Rikkyo Univ., Yokosuka, Kanagawa (Japan)
4. Nagaoka Univ. of Technology, Nagaoka, Niigata (Japan)
5. JAERI, Takasaki, Gunma (Japan)

Irradiation damage in In{sub 0.53}Ga{sub 0.47}As p-i-n photodiodes by 1-MeV fast neutrons is studied as a function of fluence for the first time. The degradation of the electrical and optical performance of diodes increases with increasing fluence. The induced lattice defects in the In{sub 0.53}Ga{sub 0.47}As epitaxial layers and the InP substrate are studied by DLTS methods. In the In{sub 0.53}Ga{sub 0.47}As epitaxial layers, hole and electron capture levels are induced by irradiation. The influence of radiation source on device degradation is then discussed by comparison to 1-MeV electrons with respect to the numbers of knock-on atoms and the nonionizing energy loss (NIEL). In order to examine the recovery behavior, isochronal thermal annealing is carried out for temperatures ranging from 75 to 300 C. After 300 C thermal annealing, the light current only recovers to 20% of preirradiation for a fluence of 1 {times} 10{sup 13} n/cm{sup 2}, while it recovers to 53% for a fluence of 1 {times} 10{sup 15} e/cm{sup 2}. The different of recovery behavior is thought to be due to a different type of radiation damage.

• OSTI ID: 445473
• Report Number(s): CONF-960773--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ANNEALING
CRYSTAL DEFECTS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GALLIUM ARSENIDES
INDIUM ARSENIDES
NEUTRONS
OPTICAL PROPERTIES
PHOTODIODES
PHYSICAL RADIATION EFFECTS