Impact of high energy particles in InGaP/InGaAs pseudomorphic HEMTs

Journal Article · Tue Dec 01 04:00:00 EST 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.736540· OSTI ID:323967

Ohyama, H; Hakata, T ^[1]; Simoen, E; Claeys, C ^[2]; Kuroda, S ^[3]; Takami, Y ^[4]; Sunaga, H ^[5]

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1. Kumamoto National Coll. of Technology, Nishigoshi, Kumamoto (Japan)
2. IMEC, Leuven (Belgium)
3. Fujitsu Quantum Devices Ltd., Yamanashi (Japan)
4. Rikkyo Univ., Yokosuka, Kanagawa (Japan)
5. Takasaki JAERI, Takasaki, Gunma (Japan)

Irradiation damage and its recovery behavior resulting from thermal annealing in InGaP/InGaAs pseudomorphic HEMTs, subjected to a 20-MeV alpha ray and 220-MeV carbon, are studied for the first time. The drain current and effective mobility decrease after irradiation, while the threshold voltage increases in positive direction. The degradation of device performance increases with increasing fluence. The decrease of the mobility is thought to be due to the scattering of channel electrons with the induced lattice defects and also to the decrease of the electron density in the two dimensional electron gas (2DEG) region. The influence of the radiation source on the degradation and recovery is discussed by comparison with 1-MeV electron and 1-MeV fast neutron exposures with respect to the number of knock-on atoms and the nonionizing energy loss (NIEL). Isochronal thermal annealing for temperatures ranging from 75 to 300 C shows that the device performance degraded by the irradiation recovers completely.

• OSTI ID: 323967
• Report Number(s): CONF-980705--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 45; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ALPHA PARTICLES
ANNEALING
CARBON IONS
CARRIER MOBILITY
ELECTRICAL PROPERTIES
ELECTRONS
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
NEUTRONS
PHYSICAL RADIATION EFFECTS
TRANSISTORS