Radiation source dependence of degradation in MOSFETs on SIMOX substrate

Book · Thu Dec 31 04:00:00 EST 1998

OSTI ID:323871

Hakata, T; Ohyama, H ^[1]; Simoen, E; Claeys, C ^[2]; Takami, Y ^[3]; Kawamura, K ^[4]; Miyahara, K ^[5]; Hososhima, M ^[6]

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1. Kumamoto National Coll. of Technology, Nishigoshi, Kumamoto (Japan)
2. IMEC, Leuven (Belgium)
3. Rikkyo Univ., Yokosuka, Kanagawa (Japan)
4. Nippon Steel Co., Hikari, Yamaguchi (Japan)
5. Kumamoto Univ., Kurokami, Kumamoto (Japan)
6. Japan Electronic Materials Co., Amagasaki, Hyogo (Japan)

Results are presented for the first time of a study on the degradation of the electrical performance of MOSFET`s processed on SIMOX substrates and subjected to a 220-MeV carbon irradiation. For the n-MOSFETs an unstable increase of the drain current in linear operation is found, while for the p-MOSFETs a drastic reduction is observed, both in linear operation and in saturation. The radiation damage is also compared to the results for 1-MeV electrons, 1-MeV fast neutrons and 20-MeV alpha rays. The differences in the damage coefficients are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the device performance by isochronal annealing is also reported.

• OSTI ID: 323871
• Report Number(s): CONF-971201--
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ALPHA PARTICLES
ANNEALING
CARBON IONS
COMPARATIVE EVALUATIONS
ELECTRICAL PROPERTIES
ELECTRONS
EXPERIMENTAL DATA
FAST NEUTRONS
MOSFET
PHYSICAL RADIATION EFFECTS