Radiation damage in Si avalanche photodiodes by 1-MeV fast neutrons and 220-MeV carbon particles

Book · Thu Dec 31 04:00:00 EST 1998

OSTI ID:323876

Ohyama, H; Hakata, T ^[1]; Simoen, E ^[2]

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1. Kumamoto National Coll. of Technology, Nishigoshi, Kumamoto (Japan)
2. IMEC, Leuven (Belgium); and others

Results are presented of a study on the degradation of the electrical and optical performance of n{sup +}p Si avalanche photodiodes, subjected to 1-MeV fast neutrons and to a 220-MeV carbon irradiation. The dark current increases after irradiation, while the photocurrent decreases. Two dominant hole capture levels, which are responsible for the degradation of performance, are after irradiation observed by DLTS (Deep Level Transient Spectroscopy). The degradation caused by neutron irradiation is smaller than that for carbon irradiation. The differences in the radiation damage are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the device performance by isochronal annealing is also reported.

• OSTI ID: 323876
• Report Number(s): CONF-971201--
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CARBON IONS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FAST NEUTRONS
OPTICAL PROPERTIES
PERFORMANCE
PHOTODIODES
PHYSICAL RADIATION EFFECTS
RADIATION DETECTORS