Degradation and recovery of Si diodes by 20-MeV protons and 220-MeV carbon particles

Book · Thu Dec 31 04:00:00 EST 1998

OSTI ID:323877

Hakata, H; Ohyama, H; Kobayashi, K ^[1]; Simoen, E; Claeys, C ^[2]; Sunaga, H ^[3]; Hososhima, M ^[4]

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1. Kumamoto National Coll. of Technology, Nishigoshi, Kumamoto (Japan)
2. IMEC, Leuven (Belgium)
3. Takasaki JAERI, Gunma (Japan)
4. Japan Electronic Materials Co., Amagasaki, Hyogo (Japan)

Results are presented of a study on the degradation of the electrical performance of Fe contaminated n{sup +}p Si diodes, subjected to a 220-MeV carbon irradiation. The reverse current of the diodes increases after irradiation, while the capacitance and hence the doping concentration decreases. The areal and peripheral components of the leakage current are extracted from diodes with different area to perimeter ratios. Both the generation and the recombination lifetime calculated from I/V and C/V characteristics also decrease. The deep levels in the Si substrate induced by the irradiation are mainly responsible for the degradation of the diode performance. The radiation damage is also studied for 1-MeV electrons and 1-MeV fast neutrons. The performance degradation for carbon irradiation is three orders of magnitude larger than that for electron irradiation. The differences in the radiation damage are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL), which is attributed to the difference of mass and the possibility of nuclear collision with target Si atoms.

• OSTI ID: 323877
• Report Number(s): CONF-971201--
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRONS
EXPERIMENTAL DATA
FAST NEUTRONS
JUNCTION DIODES
PHYSICAL RADIATION EFFECTS
SILICON