Radiation damage of InGaAs photodiodes by high energy particles

Book · Thu Dec 31 04:00:00 EST 1998

OSTI ID:323883

Kudou, T; Ohyama, H; Shigaki, K ^[1]; Simoen, E; Claeys, C ^[2]; Takami, Y ^[3]; Fujii, A ^[4]; Sunaga, H ^[5]

---

1. Kumamoto National Coll. of Technology, Nishigoshi, Kumamoto (Japan)
2. IMEC, Leuven (Belgium)
3. Rikkyo Univ., Yokosuka, Kanagawa (Japan)
4. Kumamoto Univ., Kurokami, Kumamoto (Japan)
5. Takasaki JAERI, Gunma (Japan)

Results are presented of a study on the performance degradation and the induced lattice defects of In{sub 0.53}Ga{sub 0.47}As p-i-n photodiodes, subjected to 220-MeV carbon particles. The effects on both the dark current and the photo-current are investigated as a function of the carbon fluence and correlated with DLTS results. The device degradation is compared with the one observed after exposure to 1-MeV electrons, 1-MeV fast neutrons and 20-MeV alpha rays, respectively. The differences in damage coefficients will be explained in view of the calculated number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the diode performance and of the induced deep levels by isochronal annealing is also reported.

• OSTI ID: 323883
• Report Number(s): CONF-971201--
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ALPHA PARTICLES
ANNEALING
CARBON IONS
CRYSTAL DEFECTS
ELECTRICAL PROPERTIES
ELECTRONS
EXPERIMENTAL DATA
FAST NEUTRONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
PHOTODIODES