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Title: Impurity-induced disorder in III-nitride materials and devices

Patent ·
OSTI ID:1164349
;

A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
8,895,335
Application Number:
13/558,516
OSTI ID:
1164349
Country of Publication:
United States
Language:
English

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Cited By (2)

Methods for forming photonic integrated circuits based on quantum cascade structures patent August 2017
Photonic integrated circuits based on quantum cascade structures patent September 2016

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36 MATERIALS SCIENCE