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Title: Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications

Abstract

We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the first year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The first year activities were focused on the installation, set-up, and use of advanced equipment for the metalorganic chemical vapor deposition growth of III-nitride films and the characterization of these materials (Task 1) and the design, fabrication, testing of nitride LEDs (Task 4). As a progress highlight, we obtained improved quality of {approx} 2 {micro}m-thick GaN layers (as measured by the full width at half maximum of the asymmetric (102) X-ray diffraction peak of less than 350 arc-s) and higher p-GaN:Mg doping level (free hole carrier higher than 1E18 cm{sup -3}). Also in this year, we have developed the growth of InGaN/GaN active layers for long-wavelength green light emitting diodes, specifically, for emission at {lambda} {approx} 540nm. The effect of the Column III precursor (for Ga) and the post-growth thermal annealing effect were also studied. Our LED device fabrication process was developed and initially optimized, especially for low-resistance ohmic contacts for p-GaN:Mg layers, and blue-green light emitting diodemore » structures were processed and characterized.« less

Authors:
Publication Date:
Research Org.:
Georgia Tech Research Corp
Sponsoring Org.:
USDOE
OSTI Identifier:
892439
DOE Contract Number:
FC26-03NT41946
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CHEMICAL VAPOR DEPOSITION; DESIGN; FABRICATION; LIGHT EMITTING DIODES; NITRIDES; PRECURSOR; TESTING; WAVELENGTHS; X-RAY DIFFRACTION

Citation Formats

Russell D. Dupuis. Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications. United States: N. p., 2004. Web. doi:10.2172/892439.
Russell D. Dupuis. Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications. United States. doi:10.2172/892439.
Russell D. Dupuis. Thu . "Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications". United States. doi:10.2172/892439. https://www.osti.gov/servlets/purl/892439.
@article{osti_892439,
title = {Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications},
author = {Russell D. Dupuis},
abstractNote = {We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the first year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The first year activities were focused on the installation, set-up, and use of advanced equipment for the metalorganic chemical vapor deposition growth of III-nitride films and the characterization of these materials (Task 1) and the design, fabrication, testing of nitride LEDs (Task 4). As a progress highlight, we obtained improved quality of {approx} 2 {micro}m-thick GaN layers (as measured by the full width at half maximum of the asymmetric (102) X-ray diffraction peak of less than 350 arc-s) and higher p-GaN:Mg doping level (free hole carrier higher than 1E18 cm{sup -3}). Also in this year, we have developed the growth of InGaN/GaN active layers for long-wavelength green light emitting diodes, specifically, for emission at {lambda} {approx} 540nm. The effect of the Column III precursor (for Ga) and the post-growth thermal annealing effect were also studied. Our LED device fabrication process was developed and initially optimized, especially for low-resistance ohmic contacts for p-GaN:Mg layers, and blue-green light emitting diode structures were processed and characterized.},
doi = {10.2172/892439},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Sep 30 00:00:00 EDT 2004},
month = {Thu Sep 30 00:00:00 EDT 2004}
}

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