Selective layer disordering in III-nitrides with a capping layer

Wierer, Jr., Jonathan J.; Allerman, Andrew A.

Selective layer disordering in III-nitrides with a capping layer

Patent · Tue Jun 14 04:00:00 EDT 2016

OSTI ID:1257205

Wierer, Jr., Jonathan J.; Allerman, Andrew A.

Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: 9,368,677

Application Number:: 14/540,686

OSTI ID:: 1257205

Country of Publication:: United States

Language:: English

References (13)

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