Impurity-induced disorder in III-nitride materials and devices

Wierer, Jr., Jonathan J; Allerman, Andrew A

Impurity-induced disorder in III-nitride materials and devices

Patent · 25 November 2014

OSTI ID:1164349

Wierer, Jr., Jonathan J; Allerman, Andrew A

A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.

View Patent

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: 8,895,335

Application Number:: 13/558,516

OSTI ID:: 1164349

Country of Publication:: United States

Language:: English

References (14)

Annealing of GaN under high pressure of nitrogen Porowski, S.; Grzegory, I.; Kolesnikov, D. Journal of Physics: Condensed Matter, Vol. 14, Issue 44 https://doi.org/10.1088/0953-8984/14/44/433	journal	October 2002
Disordering of InGaN/GaN Superlattices After High-Pressure Annealing McCluskey, M. D.; Romano, L. T.; Krusor, B. S. MRS Proceedings, Vol. 537 https://doi.org/10.1557/PROC-537-G3.42	journal	January 1998
Impurity diffusion and layer interdiffusion in Al _x Ga _{1− x} As‐GaAs heterostructures Deppe, D. G.; Holonyak, N.; Plano, W. E. Journal of Applied Physics, Vol. 64, Issue 4 https://doi.org/10.1063/1.341759	journal	August 1988
Disorder of an AlAs‐GaAs superlattice by impurity diffusion Laidig, W. D.; Holonyak, N.; Camras, M. D. Applied Physics Letters, Vol. 38, Issue 10 https://doi.org/10.1063/1.92159	journal	May 1981
Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75–4.2 μm Gmachl, Claire; Ng, Hock M.; Cho, Alfred Y. Applied Physics Letters, Vol. 77, Issue 3 https://doi.org/10.1063/1.126968	journal	July 2000
Blueshift of intersubband transition wavelength in AlN/GaN multiple quantum wells by low temperature metal organic vapor phase epitaxy using pulse injection method Yang, Jung-Seung; Sodabanlu, Hassanet; Sugiyama, Masakazu Applied Physics Letters, Vol. 95, Issue 16 https://doi.org/10.1063/1.3254230	journal	October 2009
GaN/AlN-based quantum-well infrared photodetector for 1.55 μm Hofstetter, Daniel; Schad, Sven-Silvius; Wu, Hong Applied Physics Letters, Vol. 83, Issue 3 https://doi.org/10.1063/1.1594265	journal	July 2003
Impurity‐induced layer disordering of high gap In _y (Al _x Ga _{1− x} ) _{1− y} P heterostructures Deppe, D. G.; Nam, D. W.; Holonyak, N. Applied Physics Letters, Vol. 52, Issue 17 https://doi.org/10.1063/1.99132	journal	April 1988
Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by ar-implantation-induced partial disordering Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V. Journal of Electronic Materials, Vol. 31, Issue 5 https://doi.org/10.1007/s11664-002-0088-5	journal	May 2002
Sub-picosecond all-optical gate utilizing aN intersubband transition Iizuka, Norio; Kaneko, Kei; Suzuki, Nobuo Optics Express, Vol. 13, Issue 10 https://doi.org/10.1364/OPEX.13.003835	journal	January 2005
Impurity‐induced disordering of single well Al _x Ga _{1− x} As‐GaAs quantum well heterostructures Meehan, K.; Brown, J. M.; Camras, M. D. Applied Physics Letters, Vol. 44, Issue 4 https://doi.org/10.1063/1.94798	journal	February 1984
Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well Chan, Michael C. Y.; Tsang, Kwok-On; Li, E. Herbert MRS Proceedings, Vol. 537 https://doi.org/10.1557/PROC-537-G6.25	journal	January 1998
Indium surfactant effect on AlN∕GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions Nicolay, S.; Feltin, E.; Carlin, J. -F. Applied Physics Letters, Vol. 88, Issue 15 https://doi.org/10.1063/1.2186971	journal	April 2006
Interdiffusion between GaAs and AlAs Chang, L. L.; Koma, A. Applied Physics Letters, Vol. 29, Issue 3 https://doi.org/10.1063/1.89026	journal	August 1976

Similar Records

Selective layer disordering in III-nitrides with a capping layer

Patent · 2016 · OSTI ID:1257205

Methods for improved growth of group III nitride buffer layers

Patent · 2014 · OSTI ID:1143685

Methods for enhancing P-type doping in III-V semiconductor films

Patent · 2017 · OSTI ID:1373713

Related Subjects

36 MATERIALS SCIENCE

Impurity-induced disorder in III-nitride materials and devices

Citation Formats

References (14)

Similar Records

Related Subjects