Impurity-induced layer disordering of In/sub 0. 53/Ga/sub 0. 47/As/In/sub 0. 52/Al/sub 0. 48/As heterostructures

Journal Article · Mon Dec 05 00:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100260· OSTI ID:6728751

Baird, R J; Potter, T J; Lai, R; Kothiyal, G P; Bhattacharya, P K

Impurity-induced layer disordering of In/sub 0.53/ Ga/sub 0.47/ As/In/sub 0.52/ Al/sub 0.48/ As heterostructures grown by molecular beam epitaxy has been observed by Auger electron spectroscopy depth profiling. We find that Si/sup +/ ion implantation to concentrations greater than 2 x 10/sup 19/ atoms cm/sup -3/ enhances the intermixing of Ga and Al in these heterostructures at an annealing temperature of 1075 K. However, the relatively high temperature which is required to activate the interdiffusion of Ga and Al in the region of high Si concentration is sufficient to induce In diffusion in regions of lower Si concentration. Zinc diffusion is found to completely intermix the Ga and Al in the heterolayers at temperatures as low as 825 K, which is below the temperature at which significant In diffusion occurs in undoped regions.

• Research Organization: Ford Motor Company, Research Staff, P. O. Box 2053, Dearborn, Michigan 48121-2053
• OSTI ID: 6728751
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 53:23
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
MIXING
ALUMINIUM ARSENIDES
ATOM TRANSPORT
HETEROJUNCTIONS
ION IMPLANTATION
GALLIUM
GALLIUM ARSENIDES
INDIUM
DIFFUSION
INDIUM ARSENIDES
ZINC
ANNEALING
AUGER ELECTRON SPECTROSCOPY
IMPURITIES
MOLECULAR BEAM EPITAXY
SILICON
SILICON IONS
VERY HIGH TEMPERATURE
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
ELECTRON SPECTROSCOPY
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
HEAT TREATMENTS
INDIUM COMPOUNDS
IONS
JUNCTIONS
METALS
NEUTRAL-PARTICLE TRANSPORT
PNICTIDES
RADIATION TRANSPORT
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SPECTROSCOPY
360603* - Materials- Properties