Impurity-induced layer disordering of In/sub 0. 53/Ga/sub 0. 47/As/In/sub 0. 52/Al/sub 0. 48/As heterostructures
Journal Article
·
· Appl. Phys. Lett.; (United States)
Impurity-induced layer disordering of In/sub 0.53/ Ga/sub 0.47/ As/In/sub 0.52/ Al/sub 0.48/ As heterostructures grown by molecular beam epitaxy has been observed by Auger electron spectroscopy depth profiling. We find that Si/sup +/ ion implantation to concentrations greater than 2 x 10/sup 19/ atoms cm/sup -3/ enhances the intermixing of Ga and Al in these heterostructures at an annealing temperature of 1075 K. However, the relatively high temperature which is required to activate the interdiffusion of Ga and Al in the region of high Si concentration is sufficient to induce In diffusion in regions of lower Si concentration. Zinc diffusion is found to completely intermix the Ga and Al in the heterolayers at temperatures as low as 825 K, which is below the temperature at which significant In diffusion occurs in undoped regions.
- Research Organization:
- Ford Motor Company, Research Staff, P. O. Box 2053, Dearborn, Michigan 48121-2053
- OSTI ID:
- 6728751
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:23; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Silicon doping and impurity profiles in Ga/sub 0. 47/In/sub 0. 53/As and Al/sub 0. 48/In/sub 0. 52/As grown by molecular beam epitaxy
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Enhancement of current peak-to-valley ratio in In/sub 0. 52/Al/sub 0. 48/AsIn/sub 0. 53/Ga/sub 0. 47/As -based resonant tunneling diodes
Journal Article
·
Tue Jun 01 00:00:00 EDT 1982
· J. Appl. Phys.; (United States)
·
OSTI ID:5263801
Al/sub 0. 48/In/sub 0. 52/ As/Ga/sub 0. 47/In/sub 0. 53/ As/Al/sub 0. 48/In/sub 0. 52/As double-heterostructure lasers grown by molecular-beam epitaxy with lasing wavelength at 1. 65. mu. m
Journal Article
·
Mon Jun 01 00:00:00 EDT 1981
· J. Appl. Phys.; (United States)
·
OSTI ID:6265847
Enhancement of current peak-to-valley ratio in In/sub 0. 52/Al/sub 0. 48/AsIn/sub 0. 53/Ga/sub 0. 47/As -based resonant tunneling diodes
Journal Article
·
Wed Jun 15 00:00:00 EDT 1988
· J. Appl. Phys.; (United States)
·
OSTI ID:5253833
Related Subjects
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALUMINIUM
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
AUGER ELECTRON SPECTROSCOPY
CHARGED PARTICLES
DIFFUSION
ELECTRON SPECTROSCOPY
ELEMENTS
EPITAXY
GALLIUM
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HETEROJUNCTIONS
IMPURITIES
INDIUM
INDIUM ARSENIDES
INDIUM COMPOUNDS
ION IMPLANTATION
IONS
JUNCTIONS
METALS
MIXING
MOLECULAR BEAM EPITAXY
NEUTRAL-PARTICLE TRANSPORT
PNICTIDES
RADIATION TRANSPORT
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON IONS
SPECTROSCOPY
VERY HIGH TEMPERATURE
ZINC
360603* -- Materials-- Properties
ALUMINIUM
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
AUGER ELECTRON SPECTROSCOPY
CHARGED PARTICLES
DIFFUSION
ELECTRON SPECTROSCOPY
ELEMENTS
EPITAXY
GALLIUM
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HETEROJUNCTIONS
IMPURITIES
INDIUM
INDIUM ARSENIDES
INDIUM COMPOUNDS
ION IMPLANTATION
IONS
JUNCTIONS
METALS
MIXING
MOLECULAR BEAM EPITAXY
NEUTRAL-PARTICLE TRANSPORT
PNICTIDES
RADIATION TRANSPORT
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON IONS
SPECTROSCOPY
VERY HIGH TEMPERATURE
ZINC