Silicon doping and impurity profiles in Ga/sub 0. 47/In/sub 0. 53/As and Al/sub 0. 48/In/sub 0. 52/As grown by molecular beam epitaxy

Journal Article · Tue Jun 01 04:00:00 EDT 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.331224· OSTI ID:5263801

Cheng, K Y; Cho, A Y

Silicon-doped n-type Ga/sub 0.47/In/sub 0.53/As and Al/sub 0.48/In/sub 0.52/As epitaxial layers lattice matched to InP substrates have been grown by molecular beam epitaxy. Doping levels up to 7 x 10/sup 18/ cm/sup -3/ vary proportionally with the arrival rate of Si. For the same Si arrival rate, the carrier concentrations in both ternary epitaxial layers are identical. Mobility studies showed that the variations of electron mobility as a function of carrier concentration in Si-doped Ga/sub 0.47/In/sub 0.53/As are in good agreement with the theoretically calculated results involving the alloy scattering mechanism at both 77 and 300 K. This alloy scattering mechanism is attributed to the defects induced at lower growth temperature. Doping profile measurements by the differential capacitance technique show that very abrupt changes in carrier concentration can be realized in Si-doped Ga/sub 0.47/In/sub 0.53/As and Al/sub 0.48/In/sub 0.52/As and Sn-doped Al/sub 0.48/In/sub 0.52/As. In the case of Sn-doped Ga/sub 0.47/In/sub 0.53/As, the sharpness of the doping profile is limited by the surface segregation of Sn. Schottky barrier height on Ga/sub 0.47/In/sub 0.53/As was enhanced with the aid of a thin n-type Al/sub 0.48/In/sub 0.52/As surface layer.

• Research Organization: Electrical Engineering Department, Chung-Cheng Institute of Technology, Tao-Yuom, Taiwan, Republic of China
• OSTI ID: 5263801
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:6; ISSN JAPIA
• Country of Publication: United States
• Language: English

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14 SOLAR ENERGY
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36 MATERIALS SCIENCE
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360603* -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CARRIER DENSITY
CRYSTAL GROWTH
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DISTRIBUTION
DOPED MATERIALS
ELECTRON MOBILITY
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MATERIALS
MATHEMATICAL MODELS
MOBILITY
MOLECULAR BEAMS
N-TYPE CONDUCTORS
PARTICLE MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTITY RATIO
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SPATIAL DISTRIBUTION
SUBSTRATES