Al/sub 0. 48/In/sub 0. 52/ As/Ga/sub 0. 47/In/sub 0. 53/ As/Al/sub 0. 48/In/sub 0. 52/As double-heterostructure lasers grown by molecular-beam epitaxy with lasing wavelength at 1. 65. mu. m
Journal Article
·
· J. Appl. Phys.; (United States)
The preparation and operation of lattice-matched Al/sub 0.48/Ga/sub 0.52/As/Ga/sub 0.47/In/sub 0.52/As/Al/sub 0.48/In/sub 0.52/As double-heterostructure lasers lasing at 1.65 ..mu..m grown on InP substrates by molecular-beam epitaxy are described. The present result represents the first current injection semiconductor laser ever fabricated from the Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As/Al/sub 0.48/In/sub 0.52/As double heterostructure. Broad-area Fabry-Perot laser (0.15-..mu..m-thick Ga/sub 0.47/In/sub 0.53/As active layer) with pulsed current threshold density as low as 3.3 kA/cm/sup 2/ has been obtained at room temperature and operated at heat-sink temperatures as high as 115 /sup 0/C studied. The threshold-current temperature dependence has a characteristic temperature T/sub 0/ of 70 /sup 0/C in the temperature range of 25/sup 0/--115 /sup 0/C.
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07994
- OSTI ID:
- 6265847
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:6; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Silicon doping and impurity profiles in Ga/sub 0. 47/In/sub 0. 53/As and Al/sub 0. 48/In/sub 0. 52/As grown by molecular beam epitaxy
Enhancement of current peak-to-valley ratio in In/sub 0. 52/Al/sub 0. 48/AsIn/sub 0. 53/Ga/sub 0. 47/As -based resonant tunneling diodes
Ga/sub 0. 47/In/sub 0. 53/As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1. 53. mu. m
Journal Article
·
Tue Jun 01 00:00:00 EDT 1982
· J. Appl. Phys.; (United States)
·
OSTI ID:5263801
Enhancement of current peak-to-valley ratio in In/sub 0. 52/Al/sub 0. 48/AsIn/sub 0. 53/Ga/sub 0. 47/As -based resonant tunneling diodes
Journal Article
·
Wed Jun 15 00:00:00 EDT 1988
· J. Appl. Phys.; (United States)
·
OSTI ID:5253833
Ga/sub 0. 47/In/sub 0. 53/As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1. 53. mu. m
Journal Article
·
Tue Jan 31 23:00:00 EST 1984
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5247084
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CURRENT DENSITY
EPITAXY
FABRICATION
FABRY-PEROT INTERFEROMETER
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTERFEROMETERS
LASERS
MEASURING INSTRUMENTS
MEDIUM TEMPERATURE
MOLECULAR BEAMS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PULSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SUBSTRATES
TEMPERATURE DEPENDENCE
WAVELENGTHS
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CURRENT DENSITY
EPITAXY
FABRICATION
FABRY-PEROT INTERFEROMETER
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTERFEROMETERS
LASERS
MEASURING INSTRUMENTS
MEDIUM TEMPERATURE
MOLECULAR BEAMS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PULSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SUBSTRATES
TEMPERATURE DEPENDENCE
WAVELENGTHS